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1 / 1 5 n ??? n - channel mosfet j cs 2 n60 order codes ? marking ? package halogen free ? packaging device weight jcs2n60 v - o - v - n - b jcs2n60 v ipak no tube 0.3 5 g(typ) jcs2n60 r - o - r - n - b jcs2n60 r dpak no tube 0.3 0 g(typ) jcs 2 n60c - o - c - n - b jcs 2 n60c to - 220c no tube 2.15 g(typ) jcs 2 n60f - o - f - n - b jcs 2 n60f to - 220 m f no tube 2.20 g(typ) jcs2n60v - r - v - n - b jcs2n60v ipak yes tube 0.35 g(typ) ? package ? main characteristics i d 2.0 a v dss 6 00 v rdson @vgs=10v 5 qg 1 5.3 nc ? ? ??? ? ? ups ? applications ? high frequency switching mode power supply ? electronic ballast ? ups ? ? ? ? c b rss b ( ? 7.6 pf) ? ?? ? ??? ? ? dv/dt ? rohs ? features ? l ow gate charge ? low c b rss b (typical 7.6 pf ) ? fast switching ? 100% avalanche tested ? improved dv/dt capa bility ? rohs product ? order message r
jcs 2n 60 20 1 607a 2 / 1 5 ?? absol ute ratings (tc=25 ) * ?? *drain current limited by maximum junction temperature ? parameter symbol ? value unit jcs2n60 v / r jcs2n60c jcs2n60f ??? ? b dss b 600 v ? b d b t=25 t=100 ? ? 1 drain current C b dm b 6.0 6.0 * a ??? b gss b 30 v ? ? 2 single pulsed avalanche energy b as b 120 mj ? ? 1 avalanche current ( note 1 ) i b ar b 2.0 a ?? ? 1 b ar b 5.4 mj ?? ? ? 3 peak diode recovery d v/dt ? b d b t b c b =25 - derate above 25 ??? b j b b stg b - 55 ?? b l b 300 r
jcs 2n 60 20 1 607a 3 / 1 5 e lectrical c haracteristics ? parameter symbol tests conditions min typ max units ? off C characteristics ??? drain - source voltage bv b dss b i b d b =250 a, v b gs b =0v 6 00 - - v ?? breakdown voltage temperature coefficient bv b dss b / t b j b i b d b = 1m a, referenced to 25 - 0. 65 - v/ ???? zero gate voltage drain current i b dss b v b ds b = 6 00v,v b gs b =0v, t b c b =25 - - 1 0 a v b ds b = 48 0v, t b c b =125 - - 1 0 0 a ?? gate - body leakage current, forward i b gssf b v b ds b =0v, v b gs b =30v - - 100 na ?? gate - body leakage current, reverse i b gssr b v b ds b =0v, v b gs b = - 30v - - - 100 na ?? on - characteristics ?? gate threshold voltage v b gs(th) b v b ds b = v b gs b , i b d b =250 a 2 .0 - 4 .0 v ?? static drain - source on - resistance r b ds(on) b v b gs b =10v , i b d b = 1 a - 3.8 5 .0 ? forward transconductance g b fs b v b ds b = 4 0v , i b d b = 1.0a note 4 - 2.05 - s ? dynamic characteristics input capaci tance c b iss b v b ds b =25v, v b gs b =0v, f=1.0mh b z b - 380 490 pf output capacitance c b oss b - 35 46 pf reverse transfer capacitance c b rss b - 7.6 9.9 pf r
jcs 2n 60 20 1 607a 4 / 1 5 e lectrical c haracteristics switching characteristics ?? turn - on delay time t b d b (on) v b dd b = 30 0v,i b d b = 2.0 a,r b g b =25? note 4 5 - 16 40 ns ? turn - on rise time t b r b - 50 110 ns ?? turn - off delay time t b d b (off) - 40 90 ns ?? turn - off fall time t b f b - 40 90 ns ? total gate charge q b g b v b ds b = 48 0v , i b d b = 2.0 a v b gs b =10v note 4 5 - 1 5.3 1 9 nc ?? gate - source charge q b gs b - 1.8 - nc ?? gate - drain charge q b gd b - 7.2 - nc ????? drain - source diode characteristics and maximum ratings maximum continuous drain - source diode forward curr ent i b s b - - 2.0 a maximum pulsed drain - source diode forward current i b sm b - - 6 .0 a ? drain - source diode forward voltage v b sd b v b gs b =0v, i b s b = 2.0 a - - 1. 4 v ?? reverse recovery time t b rr b v b gs b =0v, i b s b = 2.0 a di b f b /dt=100a/ s (note 4) - 250 - ns ? reverse recovery charge q b rr bbb - 1.31 - c ? parameter symbol max unit jcs 2n60v/r jcs 2n60c jcs 2n60f ??? thermal resistance, junction to case r th(j - c) 2. 87 2.3 2 5. 5 0 /w ? thermal resistance, junction to ambient r th(j - a) 110 62.5 62.5 /w ? ? 1 ? 2 l= 55 mh, i b as b = 2 .0 a, v b dd b =50v, r b g b =25 ?, ? t b j b =25 3 i b sd b 2 a,di/dt 3 00a/ s,vddbv b dss b , ? t b j b =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l= 55 mh, i b as b = 2.0 a, v b dd b =50v, r b g b =25 ?,starting t b j b =25 3 i b sd b 2 a,di/dt 3 00a/ s,vddbv b dss b , starting t b j b =25 4 pulse test pulse width 300s,duty cycle2 5 essentially independent of operating temperature r
jcs 2n 60 20 1 607a 5 / 1 5 electrical characteristics (curves) electrical characteristics (curves) transfer characteristics on - resistance variation vs. drain current and gate voltage body diode forward voltage variation vs. source current and temperature capacitance characteristics gate charge characteristics on - region characteristics r 1 10 0.1 1 v gs top 15v 10v 8v 7v 6.5v 6v 5.5v bottom 5v notes 1. 250s pulse test 2. t c =25 i d [a] v ds [v] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 note t j =25 v gs =10v v gs =20v r ds(on) [ ] i d [a] 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 v ds =480v v ds =300v v ds =120v q g toltal gate charge [nc] v gs gate source voltage[v] 2 4 6 8 10 0.1 1 10 notes 1.250s pulse test 2.v ds =40v 150 i d [a] v gs [v] 25 0.1 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 notes 1. 250s pulse test 2. v gs =0v 25 150 v s d [v] i dr [a]
jcs 2n 60 20 1 607a 6 / 1 5 breakdown voltage variation vs. temperature on - resistance variation v s. temperature maximum safe operating area for jcs 2n60 v/r/ c maximum drain current vs. case temperature maximum safe operating area for jcs2n60f r -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 notes 1. v g s =0v 2. i d =250a bv dss (normalized) t j [ ] -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes 1. v gs =10v 2. i d =1.0a r ds(on) (normalized) t j [ ] 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i d drain current [a] t c case temperature [ ]
jcs 2n 60 20 1 607a 7 / 1 5 electrical characteristics (curves) transient thermal response curve for jcs2n60c transient thermal response curve for jcs2n60f transient thermal response curve for jcs2n60 v/r r
jcs 2n 60 20 1 607a 8 / 1 5 ? package mechanical data ipak gh u nit mm r
jcs 2n 60 20 1 607a 9 / 1 5 ? package mechanical data dpak gh u nit mm r
jcs 2n 60 20 1 607a 10 / 1 5 ? package mechanical data ipak g f u nit mm r
jcs 2n 60 20 1 607a 11 / 1 5 ? package mechanical data dpak g f u nit mm r
jcs 2n 60 20 1 607a 12 / 1 5 ? package mechanical data to - 2 20 c u nit mm r
jcs 2n 60 20 1 607a 13 / 1 5 ? package mechanical data to - 2 20 mf u nit mm r
jcs 2n 60 20 1 607a 14 / 1 5 ? 1. ????????? ?????? ???? 2. ????? ?? 3. ????? ?????? 4. ??? note 1. jilin sin o - microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino - microelectronics co., ltd reserves the right to make changes in this specification sh eet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86 - 432 - 6 4678411 86 - 432 - 6 4665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86 - 432 - 6 4675588 6 4675688 6 46784 : 86 - 432 - 6 4671533 contact jilin sino - microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 6 4678411 fax 86 - 432 - 6 4665812 web site www.hwdz.com.cn market department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 6 4675588 6 467568 8 6 4678411 fax: 86 - 432 - 6 4671533 r

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